Engineering researchers at the University of Michigan have found a way to improve the performance of ferroelectric materials, which have the potential to make memory devices with more storage capacity than magnetic hard drives and faster write speed and longer lifetimes than flash memory.
In ferroelectric memory the direction of molecules' electrical polarization serves as a 0 or a 1 bit. An electric field is used to flip the polarization, which is how data is stored.
With his colleagues at U-M and collaborators from Cornell University, Penn State University,
